XPH3R206NC,L1XHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 70A 8SOP

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 70A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	XPH3R206NC,L1XHQ

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4180 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	132 W, 960 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Grade	Power Dissipation (Max)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Qualification
Toshiba Semiconductor and Storage XPH3R206NC,L1XHQ	20 V	Automotive	132 W 960 mW	175 °C	70 A	8-SOP Advance (5x5)	8-PowerVDFN	60 V	Surface Mount	65 nC	3.2 mOhm	MOSFET (Metal Oxide)	4180 pF	N-Channel	2.5 V	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 70A (Ta) 960mW (Ta), 132W (Tc) Surface Mount 8-SOP Advance (5x5)

Technical documentation and resources