1N5401G-K
ActiveTaiwan Semiconductor Corporation
DO-201AD DIODES - GENERAL PURPOSE ROHS
Deep-Dive with AI
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1N5401G-K
ActiveTaiwan Semiconductor Corporation
DO-201AD DIODES - GENERAL PURPOSE ROHS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N5401G-K |
|---|---|
| Capacitance @ Vr, F | 25 pF |
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | DO-201AD, Axial |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | DO-201AD |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
1N5401 Series
Diode 100 V 3A Through Hole DO-201AD
Documents
Technical documentation and resources