VS-150EBU02

Obsolete

Vishay General Semiconductor - Diodes Division

DIODE GP 200V 150A POWIRTAB

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Obsolete

Vishay General Semiconductor - Diodes Division

DIODE GP 200V 150A POWIRTAB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-150EBU02

Current - Average Rectified (Io)	150 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	PowIRtab™, PowerTab™
Reverse Recovery Time (trr)	45 ns
Speed	200 mA, 500 ns
Supplier Device Package	PowIRtab™
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.13 V

Part	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division VS-150EBU02	200 mA 500 ns	200 V	50 µA	Chassis Mount	PowerTab™ PowIRtab™	PowIRtab™	1.13 V	Standard	175 ░C	-55 C	45 ns	150 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 200 V 150A Chassis Mount PowIRtab™

Technical documentation and resources