CMLDM7003G TR

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Central Semiconductor Corp

MOSFET 2N-CH 50V 0.28A SOT563

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Central Semiconductor Corp

MOSFET 2N-CH 50V 0.28A SOT563

Technical Specifications

Parameters and characteristics for this part

Specification	CMLDM7003G TR

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	280 mA
Drain to Source Voltage (Vdss)	50 V
Gate Charge (Qg) (Max) @ Vgs [Max]	0.76 nC
Input Capacitance (Ciss) (Max) @ Vds	50 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	350 mW
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	SOT-563
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Power - Max [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Configuration	Mounting Type
Central Semiconductor Corp CMLDM7003T TR	350 mW	SOT-563	1.5 Ohm	50 pF	0.76 nC	SOT-563 SOT-666	50 V	1.2 V	MOSFET (Metal Oxide)	150 °C	-65 °C	280 mA	2 N-Channel (Dual)	Surface Mount
Central Semiconductor Corp CMLDM7003G TR	350 mW	SOT-563	2 Ohm	50 pF	0.76 nC	SOT-563 SOT-666	50 V	1 V	MOSFET (Metal Oxide)	150 °C	-65 °C	280 mA	2 N-Channel (Dual)	Surface Mount
Central Semiconductor Corp CMLDM7003 TR	350 mW	SOT-563	2 Ohm	50 pF	0.76 nC	SOT-563 SOT-666	50 V	1 V	MOSFET (Metal Oxide)	150 °C	-65 °C	280 mA	2 N-Channel (Dual)	Surface Mount
Central Semiconductor Corp CMLDM7003TG TR PBFREE	350 mW	SOT-563	1.5 Ohm	50 pF	0.76 nC	SOT-563 SOT-666	50 V	1.2 V	MOSFET (Metal Oxide)	150 °C	-65 °C	280 mA	2 N-Channel (Dual)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 50V 280mA 350mW Surface Mount SOT-563

Technical documentation and resources