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BYV10-600PQ - TO-220-2

BYV10-600PQ

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 10A TO220AC

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BYV10-600PQ - TO-220-2

BYV10-600PQ

Active
WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 10A TO220AC

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Technical Specifications

Parameters and characteristics for this part

SpecificationBYV10-600PQ
Current - Average Rectified (Io)10 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 °C
Package / CaseTO-220-2
Reverse Recovery Time (trr)50 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220AC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If [Max]2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 0.73
50$ 0.60
100$ 0.44
500$ 0.37
1000$ 0.31
2000$ 0.28
5000$ 0.26
10000$ 0.24

Description

General part information

BYV10 Series

Diode 600 V 10A Through Hole TO-220AC

Documents

Technical documentation and resources

No documents available