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DS1230AB-200IND - 28-EDIP

DS1230AB-200IND

Obsolete
Analog Devices Inc./Maxim Integrated

IC NVSRAM 256KBIT PAR 28EDIP

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DS1230AB-200IND - 28-EDIP

DS1230AB-200IND

Obsolete
Analog Devices Inc./Maxim Integrated

IC NVSRAM 256KBIT PAR 28EDIP

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationDS1230AB-200IND
Access Time200 ns
Memory FormatNVSRAM
Memory InterfaceParallel
Memory Organization32K x 8
Memory Size32 KB
Memory TypeNon-Volatile
Mounting TypeThrough Hole
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case0.6 in
Package / Case28-DIP Module
Package / Case15.24 mm
Supplier Device Package28-EDIP
TechnologyNVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]5.25 V
Voltage - Supply [Min]4.75 V
Write Cycle Time - Word, Page200 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

DS1230AB Series

NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 200 ns 28-EDIP

Documents

Technical documentation and resources