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2ED2104S06FXUMA1 - 2ED2182S06FXUMA1

2ED2104S06FXUMA1

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Infineon Technologies

THE 2ED2104S06F IS A 650 V HALF-BRIDGE DATE DRIVER WITH INTEGRATED BOOTSTRAP DIODE

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2ED2104S06FXUMA1 - 2ED2182S06FXUMA1

2ED2104S06FXUMA1

Active
Infineon Technologies

THE 2ED2104S06F IS A 650 V HALF-BRIDGE DATE DRIVER WITH INTEGRATED BOOTSTRAP DIODE

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Technical Specifications

Parameters and characteristics for this part

Specification2ED2104S06FXUMA1
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]700 mA
Current - Peak Output (Source, Sink) [custom]290 mA
Driven ConfigurationHalf-Bridge
Gate TypeIGBT, MOSFET
High Side Voltage - Max (Bootstrap) [Max]650 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH [custom]1.1 V
Logic Voltage - VIL, VIH [custom]1.7 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]35 ns
Rise / Fall Time (Typ) [custom]70 ns
Supplier Device PackagePG-DSO-8-69
Voltage - Supply [Max]20 V
Voltage - Supply [Min]10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 5$ 1.09
10$ 0.72
50$ 0.67
100$ 0.63
200$ 0.60
DigikeyCut Tape (CT) 1$ 1.19
10$ 0.86
25$ 0.78
100$ 0.69
250$ 0.65
500$ 0.62
1000$ 0.60
Digi-Reel® 1$ 1.19
10$ 0.86
25$ 0.78
100$ 0.69
250$ 0.65
500$ 0.62
1000$ 0.60
Tape & Reel (TR) 2500$ 0.58
5000$ 0.56
7500$ 0.55
12500$ 0.55
17500$ 0.54
NewarkEach (Supplied on Cut Tape) 1$ 1.24
10$ 0.90
25$ 0.81
50$ 0.76
100$ 0.72
250$ 0.67
500$ 0.64
1000$ 0.62

Description

General part information

2ED2104 Series

650 V high speedhalf-bridgegate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving powerMOSFETs andIGBTs. Based on ourSOI-technology, the 2ED2104S06F has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.