DSEP2X60-12A

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IXYS

DIODE MOD GP 1.2KV 60A SOT227B

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IXYS

DIODE MOD GP 1.2KV 60A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	DSEP2X60-12A

Current - Average Rectified (Io) (per Diode)	60 A
Current - Reverse Leakage @ Vr	1 mA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	40 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOT-227B
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.42 V

Part	Mounting Type	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Package / Case	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
IXYS DSEP2X60-12A	Chassis Mount	Standard	1.2 kV	2 Independent	SOT-227-4 miniBLOC	40 ns	60 A	1 mA	200 mA 500 ns	150 °C	-40 °C	2.42 V	SOT-227B

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 1200 V 60A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources