PJQ5450-AU_R2_000A1

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Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

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Active

Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5450-AU_R2_000A1

Current - Continuous Drain (Id) @ 25°C	21 A, 5.9 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	425 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.4 W, 30 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	32 mOhm
Supplier Device Package	DFN5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Qualification	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Mounting Type
Panjit International Inc. PJQ5450-AU_R2_000A1	4.5 V 10 V	40 V	AEC-Q101	2.5 V	-55 °C	175 ░C	5.9 A 21 A	2.4 W 30 W	32 mOhm	8-PowerVDFN	Automotive	4.4 nC	DFN5060-8	N-Channel	425 pF	20 V	MOSFET (Metal Oxide)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 5.9A (Ta), 21A (Tc) 2.4W (Ta), 30W (Tc) Surface Mount DFN5060-8

Technical documentation and resources