ZXT10P20DE6QTA

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Diodes Inc

POWER BIPOLAR TRANSISTOR,

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Diodes Inc

POWER BIPOLAR TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	ZXT10P20DE6QTA

Current - Collector (Ic) (Max) [Max]	2.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300
Frequency - Transition	180 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	1.1 W
Qualification	AEC-Q101
Supplier Device Package	SOT-26
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic [Max]	350 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

PNP, 20V, 2.5A, SOT26

Part	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Grade	Frequency - Transition	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Package / Case	Qualification	Power - Max [Max]
Diodes Inc ZXT10P20DE6QTA	20 V	350 mV	SOT-26	100 nA	-55 °C	150 °C	2.5 A	Automotive	180 MHz	PNP	300	Surface Mount	SOT-23-6	AEC-Q101	1.1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.