BYR5D-1200PJ

Active

WeEn Semiconductors Co., Ltd

DIODE GEN PURP 1.2KV 5A DPAK

Search across all available documentation for this part.

Active

WeEn Semiconductors Co., Ltd

DIODE GEN PURP 1.2KV 5A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	BYR5D-1200PJ

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	62 ns
Speed	200 mA, 500 ns
Supplier Device Package	DPAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.2 V

Part	Operating Temperature - Junction [Max]	Technology	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Speed
WeEn Semiconductors Co., Ltd BYR5D-1200PJ	175 °C	Standard	62 ns	2.2 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.2 kV	50 µA	DPAK	Surface Mount	5 A	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 5A Surface Mount DPAK

Technical documentation and resources

No documents available