TPCA8128,L1Q

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 34A 8SOP

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 34A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	TPCA8128,L1Q

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	115 nC
Input Capacitance (Ciss) (Max) @ Vds	4800 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	1.6 W, 45 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-25 V
Vgs(th) (Max) @ Id	2 V

Part	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Rds On (Max) @ Id, Vgs	Operating Temperature	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package
Toshiba Semiconductor and Storage TPCA8128,L1Q	Surface Mount	20 V	-25 V	4.8 mOhm	150 °C	1.6 W 45 W	P-Channel	4.5 V 10 V	115 nC	4800 pF	34 A	MOSFET (Metal Oxide)	2 V	8-PowerVDFN	30 V	8-SOP Advance (5x5)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 34A (Ta) 1.6W (Ta), 45W (Tc) Surface Mount 8-SOP Advance (5x5)

Technical documentation and resources

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