ZXMP3F37N8TA

Obsolete

Diodes Inc

MOSFET P-CH 30V 6.4A 8SO

Search across all available documentation for this part.

Obsolete

Diodes Inc

MOSFET P-CH 30V 6.4A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMP3F37N8TA

Current - Continuous Drain (Id) @ 25°C	6.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	31.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1678 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.56 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Diodes Inc ZXMP3F37N8TA	-55 °C	150 °C	8-SO	P-Channel	1678 pF	1.56 W	8-SOIC	3.9 mm	0.154 in	20 V	25 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	2.5 V	31.6 nC	30 V	6.4 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

TN1.pdf

Technical documentation and resources