2SJ377(TE16R1,NQ)

Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 5A PW-MOLD

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Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 5A PW-MOLD

Technical Specifications

Parameters and characteristics for this part

Specification	2SJ377(TE16R1,NQ)

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	630 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	PW-MOLD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature	Power Dissipation (Max)	Package / Case
Toshiba Semiconductor and Storage 2SJ377(TE16R1,NQ)	PW-MOLD	Surface Mount	190 mOhm	60 V	20 V	22 nC	MOSFET (Metal Oxide)	4 V	10 V	5 A	P-Channel	630 pF	2 V	150 °C	20 W	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 5A (Ta) 20W (Tc) Surface Mount PW-MOLD

Technical documentation and resources