71V65903S80PFGI8
Obsolete3.3V 512K X 18 ZBT SYNCHRONOUS 3.3V I/O FLOW-THROUGH SRAM
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71V65903S80PFGI8
Obsolete3.3V 512K X 18 ZBT SYNCHRONOUS 3.3V I/O FLOW-THROUGH SRAM
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Technical Specifications
Parameters and characteristics for this part
| Specification | 71V65903S80PFGI8 |
|---|---|
| Access Time | 8 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 512 K |
| Memory Size | 9 Mbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 100-LQFP |
| Supplier Device Package | 100-TQFP (14x14) |
| Technology | SRAM - Synchronous, SDR (ZBT) |
| Voltage - Supply [Max] | 3.465 V |
| Voltage - Supply [Min] | 3.135 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
71V65903 Series
The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBT™, or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.
Documents
Technical documentation and resources