PJQ5474A_R2_00001

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Panjit International Inc.

100V N-CHANNEL ENHANCEMENT MODE

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Panjit International Inc.

100V N-CHANNEL ENHANCEMENT MODE

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5474A_R2_00001

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC
Input Capacitance (Ciss) (Max) @ Vds	3555 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	52 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	DFN5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type
Panjit International Inc. PJQ5474A_R2_00001	52 W	4.5 V 10 V	2.5 V	-55 °C	150 °C	8-PowerVDFN	100 V	20 V	DFN5060-8	61 nC	3555 pF	MOSFET (Metal Oxide)	50 mOhm	Surface Mount	18 A	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 18A (Ta) 52W (Tc) Surface Mount DFN5060-8

Technical documentation and resources