2SA1507T

Obsolete

ON Semiconductor

TRANS PNP 160V 1.5A TO126ML

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Obsolete

ON Semiconductor

TRANS PNP 160V 1.5A TO126ML

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1507T

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Frequency - Transition	120 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.5 W
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

Part	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Transistor Type	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor 2SA1507T	150 °C	1 µA	500 mV	TO-126-3 TO-225AA	1.5 W	160 V	Through Hole	1.5 A	PNP	120 MHz	200 hFE
ON Semiconductor 2SA1507S	150 °C	1 µA	500 mV	TO-126-3 TO-225AA	1.5 W	160 V	Through Hole	1.5 A	PNP	120 MHz		100 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 160 V 1.5 A 120MHz 1.5 W Through Hole TO-126ML

Technical documentation and resources