SVT10100U_R1_00001

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Panjit International Inc.

EXTREME LOW VF SCHOTTKY BARRIER

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Active

Panjit International Inc.

EXTREME LOW VF SCHOTTKY BARRIER

Technical Specifications

Parameters and characteristics for this part

Specification	SVT10100U_R1_00001

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	3-PowerDFN, TO-277
Speed	200 mA, 500 ns
Supplier Device Package	TO-277
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	670 mV

Part	Technology	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)
Panjit International Inc. SVT10100U_R1_00001	Schottky	TO-277	60 µA	200 mA 500 ns	3-PowerDFN TO-277	Surface Mount	100 V	150 °C	-55 °C	670 mV	10 A
Panjit International Inc. SVT10100UB_R2_00001	Schottky	TO-277B	60 µA	200 mA 500 ns	3-PowerDFN TO-277	Surface Mount	100 V	150 °C	-55 °C	670 mV	10 A
Panjit International Inc. SVT10100U_R2_00001	Schottky	TO-277	60 µA	200 mA 500 ns	3-PowerDFN TO-277	Surface Mount	100 V	150 °C	-55 °C	670 mV	10 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 10A Surface Mount TO-277

Technical documentation and resources

No documents available