RXH100N03TB1
ActiveRohm Semiconductor
4V DRIVE NCH MOSFET: MOSFETS ARE
Deep-Dive with AI
Search across all available documentation for this part.
RXH100N03TB1
ActiveRohm Semiconductor
4V DRIVE NCH MOSFET: MOSFETS ARE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RXH100N03TB1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 4 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 13 mOhm |
| Supplier Device Package | 8-SOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.09 | |
| 10 | $ 1.34 | |||
| 100 | $ 0.91 | |||
| 500 | $ 0.72 | |||
| 1000 | $ 0.66 | |||
| Digi-Reel® | 1 | $ 2.09 | ||
| 10 | $ 1.34 | |||
| 100 | $ 0.91 | |||
| 500 | $ 0.72 | |||
| 1000 | $ 0.66 | |||
| Tape & Reel (TR) | 2500 | $ 0.55 | ||
Description
General part information
RXH100N03 Series
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Documents
Technical documentation and resources