1N649 BK

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 600V 400MA DO7

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Obsolete

Central Semiconductor Corp

DIODE GEN PURP 600V 400MA DO7

Technical Specifications

Parameters and characteristics for this part

Specification	1N649 BK

Capacitance @ Vr, F	5 pF
Current - Average Rectified (Io)	400 mA
Current - Reverse Leakage @ Vr	200 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-204AA, DO-7
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-7
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Speed	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
Central Semiconductor Corp 1N649 BK	Axial DO-204AA DO-7	DO-7	200 nA	Standard Recovery >500ns	200 mA	5 pF	175 ░C	-65 C	Through Hole	400 mA	Standard	600 V	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 400mA Through Hole DO-7

Technical documentation and resources

No documents available