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1N5617C.TR - 1N5417C.TR

1N5617C.TR

Unknown
Semtech Corporation

DIODE GEN PURP 400V 2A AXIAL

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1N5617C.TR - 1N5417C.TR

1N5617C.TR

Unknown
Semtech Corporation

DIODE GEN PURP 400V 2A AXIAL

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1N5617C.TR
Capacitance @ Vr, F27 pF
Current - Average Rectified (Io)2 A
Current - Reverse Leakage @ Vr500 nA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseAxial
Reverse Recovery Time (trr)150 ns
Speed200 mA, 500 ns
Supplier Device PackageAxial
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]400 V
Voltage - Forward (Vf) (Max) @ If1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

1N5617 Series

Diode 400 V 2A Through Hole Axial

Documents

Technical documentation and resources

No documents available