1SS133T-72

Obsolete

Rohm Semiconductor

DIODE GEN PURP 80V 130MA MSD

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Obsolete

Rohm Semiconductor

DIODE GEN PURP 80V 130MA MSD

Technical Specifications

Parameters and characteristics for this part

Specification	1SS133T-72

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	130 mA
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	DO-34, DO-204AG, Axial
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	MSD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V

Part	Current - Average Rectified (Io)	Capacitance @ Vr, F	Speed	Speed	Technology	Mounting Type	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction [Max]
Rohm Semiconductor 1SS133T-72	130 mA	2 pF	Any Speed	200 mA	Standard	Through Hole	4 ns	MSD	80 V	500 nA	Axial DO-204AG DO-34	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 80 V 130mA Through Hole MSD

Technical documentation and resources