PJE8402_R1_00001

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Panjit International Inc.

20V N-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

20V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJE8402_R1_00001

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.6 nC
Input Capacitance (Ciss) (Max) @ Vds	92 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-523
Power Dissipation (Max) [Max]	300 mW
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	SOT-523
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs
Panjit International Inc. PJE8402_R1_00001	Surface Mount	1.8 V 4.5 V	SOT-523	300 mW	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V	N-Channel	1 V	1.6 nC	8 V	SOT-523	92 pF	150 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 700mA (Ta) 300mW (Ta) Surface Mount SOT-523

Technical documentation and resources