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2N3390_D75Z - TO-92-3 Formed Leads

2N3390_D75Z

Obsolete
ON Semiconductor

TRANS NPN 25V 0.5A TO92-3

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2N3390_D75Z - TO-92-3 Formed Leads

2N3390_D75Z

Obsolete
ON Semiconductor

TRANS NPN 25V 0.5A TO92-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification2N3390_D75Z
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]400 hFE
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-226-3, TO-92-3
Power - Max [Max]625 mW
Supplier Device PackageTO-92-3
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25 V

2N339 Series

PartMounting TypeTransistor TypeOperating Temperature [Min]Operating Temperature [Max]Current - Collector (Ic) (Max) [Max]Current - Collector Cutoff (Max) [Max]DC Current Gain (hFE) (Min) @ Ic, Vce [Min]Package / CaseSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Power - Max [Max]
ON Semiconductor
Through Hole
NPN
-55 °C
150 °C
500 mA
100 nA
400 hFE
TO-226-3
TO-92-3
TO-92-3
25 V
625 mW
ON Semiconductor
Through Hole
NPN
-55 °C
150 °C
500 mA
100 nA
250
TO-226-3
TO-92-3
TO-92-3
25 V
625 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

2N339 Series

Bipolar (BJT) Transistor NPN 25 V 500 mA 625 mW Through Hole TO-92-3

Documents

Technical documentation and resources