DSEP8-12A

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IXYS

DIODE GEN PURP 1.2KV 10A TO220AC

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IXYS

DIODE GEN PURP 1.2KV 10A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	DSEP8-12A

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	40 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.94 V

Part	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Mounting Type	Supplier Device Package	Speed	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr
IXYS DSEP8-02A	25 ns	8 A	Through Hole	TO-220AC	200 mA 500 ns	TO-220-2	200 V	175 ░C	-55 C	Standard	1.3 V	50 µA
IXYS DSEP8-12A	40 ns	10 A	Through Hole	TO-220AC	200 mA 500 ns	TO-220-2	1.2 kV	175 ░C	-55 C	Standard	2.94 V	60 µA
IXYS DSEP8-06A	35 ns	10 A	Through Hole	TO-220AC	200 mA 500 ns	TO-220-2	600 V	175 ░C	-55 C	Standard	2.1 V	60 µA
IXYS DSEP8-03A	30 ns	10 A	Through Hole	TO-220AC	200 mA 500 ns	TO-220-2	300 V	175 ░C	-55 C	Standard	1.75 V	60 µA
IXYS DSEP8-06B	30 ns	10 A	Through Hole	TO-220AC	200 mA 500 ns	TO-220-2	600 V	175 ░C	-55 C	Standard	2.66 V	60 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 10A Through Hole TO-220AC

Technical documentation and resources