VP0808B-2

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET P-CH 80V 880MA TO39

Search across all available documentation for this part.

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET P-CH 80V 880MA TO39

Technical Specifications

Parameters and characteristics for this part

Specification	VP0808B-2

Current - Continuous Drain (Id) @ 25°C	880 mA
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	150 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-39-3 Metal Can, TO-205AD
Power Dissipation (Max)	6.25 W
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	TO-39
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type
Vishay General Semiconductor - Diodes Division VP0808B-2	-55 °C	150 °C	Through Hole	5 Ohm	TO-39	4.5 V	80 V	150 pF	6.25 W	10 V	MOSFET (Metal Oxide)	TO-205AD TO-39-3 Metal Can	880 mA	20 V	P-Channel
Vishay General Semiconductor - Diodes Division VP0808B	-55 °C	150 °C	Through Hole	5 Ohm	TO-39	4.5 V	80 V	150 pF	6.25 W	10 V	MOSFET (Metal Oxide)	TO-205AD TO-39-3 Metal Can	880 mA	20 V	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 80 V 880mA (Ta) 6.25W (Ta) Through Hole TO-39

Technical documentation and resources