AOB360A70L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 12A TO263

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 12A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB360A70L

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1360 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)
Alpha & Omega Semiconductor Inc. AOB360A70L	10 V	12 A	N-Channel	TO-263 (D2PAK)	22.5 nC	1360 pF	MOSFET (Metal Oxide)	Surface Mount	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	700 V	360 mOhm	-55 °C	150 °C	4 V	156 W

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General part information

N-Channel 700 V 12A (Tc) 156W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available