1EDN8511BXUSA1
ActiveEICEDRIVER™ 20 V LOW-SIDE DRIVER IC WITH TYPICAL 4 A SOURCE AND 8 A SINK OUTPUT CURRENTS. IT COMES WITH A NON-ISOLATED PG-SOT23-6 PACKAGE AND WORKS WITH GAN HEMTS, IGBTS AND MOSFETS. FEATURES: ENABLE, SEPARATE SINK/SOURCE OUTPUTS
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1EDN8511BXUSA1
ActiveEICEDRIVER™ 20 V LOW-SIDE DRIVER IC WITH TYPICAL 4 A SOURCE AND 8 A SINK OUTPUT CURRENTS. IT COMES WITH A NON-ISOLATED PG-SOT23-6 PACKAGE AND WORKS WITH GAN HEMTS, IGBTS AND MOSFETS. FEATURES: ENABLE, SEPARATE SINK/SOURCE OUTPUTS
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Technical Specifications
Parameters and characteristics for this part
| Specification | 1EDN8511BXUSA1 |
|---|---|
| Channel Type | Single |
| Current - Peak Output (Source, Sink) | 8 A, 4 A |
| Driven Configuration | Low-Side |
| Gate Type | N-Channel, P-Channel MOSFET |
| Input Type | Non-Inverting, Inverting |
| Logic Voltage - VIL, VIH | 1.9 V, 1.2 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 1 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | SOT-23-6 |
| Rise / Fall Time (Typ) [custom] | 4.5 ns |
| Rise / Fall Time (Typ) [custom] | 6.5 ns |
| Supplier Device Package | PG-SOT23-6-2 |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
1EDN8511 Series
1-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness. 1EDN family: Fast, precise, strong and compatible
Documents
Technical documentation and resources