SCT4026DEC11
ActiveRohm Semiconductor
750V, 26MΩ, 3-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE(SIC) POWER MOSFET
Deep-Dive with AI
Search across all available documentation for this part.
SCT4026DEC11
ActiveRohm Semiconductor
750V, 26MΩ, 3-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE(SIC) POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT4026DEC11 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 56 A |
| Drain to Source Voltage (Vdss) | 750 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 94 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 176 W |
| Rds On (Max) @ Id, Vgs [Max] | 34 mOhm |
| Supplier Device Package | TO-247N |
| Vgs (Max) [Max] | 21 V |
| Vgs (Max) [Min] | -4 V |
| Vgs(th) (Max) @ Id | 4.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT4026DR Series
SCT4026DR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Documents
Technical documentation and resources