GC50MPS06-247

Obsolete

GeneSiC Semiconductor

DIODE SIL CARB 650V 50A TO247-2

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Obsolete

GeneSiC Semiconductor

DIODE SIL CARB 650V 50A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	GC50MPS06-247

Current - Average Rectified (Io)	50 A
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

Part	Current - Average Rectified (Io)	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Technology	Operating Temperature - Junction [Max]
GeneSiC Semiconductor GC50MPS06-247	50 A	TO-247-2	0 ns	TO-247-2	Through Hole	650 V	No Recovery Time	SiC (Silicon Carbide) Schottky	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 13.35

General part information

Diode 650 V 50A Through Hole TO-247-2

Technical documentation and resources