MBRTA40045RL

Obsolete

GeneSiC Semiconductor

DIODE MOD SCHOTT 45V 200A 3TOWER

Search across all available documentation for this part.

Obsolete

GeneSiC Semiconductor

DIODE MOD SCHOTT 45V 200A 3TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBRTA40045RL

Current - Average Rectified (Io) (per Diode)	200 A
Current - Reverse Leakage @ Vr	5 mA
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Three Tower
Speed	200 mA, 500 ns
Supplier Device Package	Three Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	45 V
Voltage - Forward (Vf) (Max) @ If	600 mV

Part	Current - Reverse Leakage @ Vr	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Mounting Type	Package / Case
GeneSiC Semiconductor MBRTA40045RL	5 mA	200 mA 500 ns	45 V	Three Tower	600 mV	150 °C	-55 °C	Schottky	1 Pair Common Anode	200 A	Chassis Mount	Three Tower
GeneSiC Semiconductor MBRTA40020L	3 mA	200 mA 500 ns	20 V	Three Tower	580 mV	150 °C	-55 °C	Schottky	1 Pair Common Cathode	200 A	Chassis Mount	Three Tower
GeneSiC Semiconductor MBRTA40045L	5 mA	200 mA 500 ns	45 V	Three Tower	600 mV	150 °C	-55 °C	Schottky	1 Pair Common Cathode	200 A	Chassis Mount	Three Tower

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Anode 45 V 200A Chassis Mount Three Tower

Technical documentation and resources

No documents available