1N4448,133

Unknown

Freescale Semiconductor - NXP

DIODE GEN PURP 100V 200MA ALF2

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Unknown

Freescale Semiconductor - NXP

DIODE GEN PURP 100V 200MA ALF2

Technical Specifications

Parameters and characteristics for this part

Specification	1N4448,133

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	25 nA
Mounting Type	Through Hole
Operating Temperature - Junction	200 °C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	ALF2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Technology	Speed	Speed	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Package / Case	Operating Temperature - Junction	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]
Freescale Semiconductor - NXP 1N4448,133	Standard	Any Speed	200 mA	4 pF	1 V	ALF2	200 mA	4 ns	Axial DO-204AH DO-35	200 °C	25 nA	Through Hole	100 V

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General part information

Diode 100 V 200mA Through Hole ALF2

Technical documentation and resources