PJW1NA50_R2_00001

Obsolete

Panjit International Inc.

500V N-CHANNEL MOSFET

Search across all available documentation for this part.

Obsolete

Panjit International Inc.

500V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJW1NA50_R2_00001

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	95 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3.3 W
Rds On (Max) @ Id, Vgs	9 Ohm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
Panjit International Inc. PJW1NA50_R2_00001	300 mA	TO-261-4 TO-261AA	Surface Mount	SOT-223	MOSFET (Metal Oxide)	500 V	-55 °C	150 °C	N-Channel	30 V	3.3 W	4 V	95 pF	10 V	4.2 nC	9 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 300mA (Ta) 3.3W (Tc) Surface Mount SOT-223

Technical documentation and resources

No documents available