AOI21357

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 23A/70A TO251A

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 23A/70A TO251A

Technical Specifications

Parameters and characteristics for this part

Specification	AOI21357

Current - Continuous Drain (Id) @ 25°C	70 A, 23 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds	2830 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	6.2 W, 78 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	TO-251A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.3 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology	Package / Case	Mounting Type	Vgs (Max)	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
Alpha & Omega Semiconductor Inc. AOI21357	2830 pF	30 V	-55 °C	150 °C	23 A 70 A	6.2 W 78 W	MOSFET (Metal Oxide)	TO-251-3 Stub Leads IPAK	Through Hole	25 V	TO-251A	P-Channel	70 nC	8 mOhm	4.5 V 10 V	2.3 V

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General part information

P-Channel 30 V 23A (Ta), 70A (Tc) 6.2W (Ta), 78W (Tc) Through Hole TO-251A

Technical documentation and resources