2SC5053T100R

Rohm Semiconductor

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 50V V(BR)CEO, 1-ELEMENT, NPN, SILICON

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Rohm Semiconductor

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 50V V(BR)CEO, 1-ELEMENT, NPN, SILICON

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5053T100R

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180 hFE
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	500 mW
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case	Power - Max [Max]	Transistor Type
Rohm Semiconductor 2SC5053T100Q	Surface Mount	50 V	1 A	400 mV	150 °C	150 MHz	120	100 nA	TO-243AA	2 W	NPN
Rohm Semiconductor 2SC5053T100R	Surface Mount	50 V	1 A	400 mV	150 °C	150 MHz	180 hFE	100 nA	TO-243AA	500 mW	NPN

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General part information

Bipolar (BJT) Transistor NPN 50 V 1 A 150MHz 500 mW Surface Mount MPT3

Technical documentation and resources