GP2T080A120H

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SemiQ

SIC MOSFET 1200V 80M TO-247-4L

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SemiQ

SIC MOSFET 1200V 80M TO-247-4L

Technical Specifications

Parameters and characteristics for this part

Specification	GP2T080A120H

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	61 nC
Input Capacitance (Ciss) (Max) @ Vds	1377 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	188 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-247-4
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Power Dissipation (Max)	Vgs (Max) [Min]	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
SemiQ GP2T080A120H	N-Channel	188 W	-10 V	25 V	35 A	Through Hole	TO-247-4	4 V	TO-247-4	1200 V	100 mOhm	1377 pF	-55 °C	175 ░C	61 nC
SemiQ GP2T080A120U	N-Channel	188 W	-10 V	25 V	35 A	Through Hole	TO-247-3	4 V	TO-247-3	1200 V	100 mOhm	1377 pF	-55 °C	175 ░C		58 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1200 V 35A (Tc) 188W (Tc) Through Hole TO-247-4

Technical documentation and resources