PJD30N15_L2_00001

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Panjit International Inc.

150V N-CHANNEL ENHANCEMENT MODE

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Panjit International Inc.

150V N-CHANNEL ENHANCEMENT MODE

Technical Specifications

Parameters and characteristics for this part

Specification	PJD30N15_L2_00001

Current - Continuous Drain (Id) @ 25°C	25 A, 3.5 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	29.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1764 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	2 W, 102 W
Rds On (Max) @ Id, Vgs [Max]	65 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Panjit International Inc. PJD30N15_L2_00001	-55 °C	150 °C	29.5 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	N-Channel	TO-252AA	65 mOhm	MOSFET (Metal Oxide)	4 V	1764 pF	25 V	6 V 10 V	2 W 102 W	3.5 A 25 A	150 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 3.5A (Ta), 25A (Tc) 2W (Ta), 102W (Tc) Surface Mount TO-252AA

Technical documentation and resources

No documents available