PJP45N06A_T0_00001

NRND

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

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NRND

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJP45N06A_T0_00001

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	2256 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	96 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
Panjit International Inc. PJP45N06A_T0_00001	20 V	2.5 V	TO-220-3	60 V	96 W	-55 °C	150 °C	2256 pF	39 nC	TO-220AB	12 mOhm	Through Hole	N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	55 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 55A (Tc) 96W (Tc) Through Hole TO-220AB

Technical documentation and resources