PJX8872B_R1_00001

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Panjit International Inc.

MOSFET 2N-CH 60V 0.2A SOT563

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Panjit International Inc.

MOSFET 2N-CH 60V 0.2A SOT563

Technical Specifications

Parameters and characteristics for this part

Specification	PJX8872B_R1_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	0.82 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	34 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	SOT-563
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Configuration	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology
Panjit International Inc. PJX8872B_R1_00001	3 Ohm	60 V	2.5 V	-55 °C	150 °C	300 mW	0.82 nC	SOT-563 SOT-666	200 mA	2 N-Channel (Dual)	Surface Mount	34 pF	SOT-563	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 200mA (Ta) 300mW (Ta) Surface Mount SOT-563

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