GBS4J

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Diotec Semiconductor

BRIDGE 1PH GBS SIL-1.5-2.3 600V

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Diotec Semiconductor

BRIDGE 1PH GBS SIL-1.5-2.3 600V

Technical Specifications

Parameters and characteristics for this part

Specification	GBS4J

Current - Average Rectified (Io)	2.3 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	4-ESIP
Supplier Device Package	4-SIL
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.05 V
Voltage - Peak Reverse (Max) [Max]	600 V

Part	Voltage - Forward (Vf) (Max) @ If	Diode Type	Voltage - Peak Reverse (Max) [Max]	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Package / Case	Current - Reverse Leakage @ Vr
Diotec Semiconductor GBS4B	1.05 V	Single Phase	100 V	4-SIL	Through Hole	2.3 A	150 °C	-50 °C	Standard	4-ESIP	5 µA
Diotec Semiconductor GBS4J	1.05 V	Single Phase	600 V	4-SIL	Through Hole	2.3 A	150 °C	-50 °C	Standard	4-ESIP	5 µA
Diotec Semiconductor GBS4A	1.05 V	Single Phase	50 V	4-SIL	Through Hole	2.3 A	150 °C	-50 °C	Standard	4-ESIP	5 µA
Diotec Semiconductor GBS4K	1.05 V	Single Phase	800 V	4-SIL	Through Hole	2.3 A	150 °C	-50 °C	Standard	4-ESIP	5 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 600 V Through Hole 4-SIL

Technical documentation and resources