2SA1298-Y,LF

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Toshiba Semiconductor and Storage

TRANS PNP 25V 0.8A SMINI

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Toshiba Semiconductor and Storage

TRANS PNP 25V 0.8A SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1298-Y,LF

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Frequency - Transition	120 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Supplier Device Package	S-Mini
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

Part	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature
Toshiba Semiconductor and Storage 2SA1298-Y,LF	400 mV	SC-59 SOT-23-3 TO-236-3	800 mA	200 mW	25 V	Surface Mount	120 MHz	100 nA	S-Mini	PNP	160	150 °C

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General part information

Bipolar (BJT) Transistor PNP 25 V 800 mA 120MHz 200 mW Surface Mount S-Mini

Technical documentation and resources