G3R20MT12K

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GeneSiC Semiconductor

SIC MOSFET N-CH 128A TO247-4

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GeneSiC Semiconductor

SIC MOSFET N-CH 128A TO247-4

Technical Specifications

Parameters and characteristics for this part

Specification	G3R20MT12K

Current - Continuous Drain (Id) @ 25°C	128 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	219 nC
Input Capacitance (Ciss) (Max) @ Vds	5873 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	542 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	TO-247-4
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2.69 V

Part	Package / Case	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]
GeneSiC Semiconductor G3R20MT12K	TO-247-4	TO-247-4	N-Channel	1200 V	128 A	15 V	Through Hole	5873 pF	542 W	24 mOhm	219 nC	15 V	2.69 V	-55 °C	175 ░C
GeneSiC Semiconductor G3R20MT17K	TO-247-4	TO-247-4	N-Channel	1700 V	124 A	15 V	Through Hole	10187 pF	809 W			15 V	2.7 V	-55 °C	175 ░C	400 nC	26 mOhm
GeneSiC Semiconductor G3R20MT17N	SOT-227-4 miniBLOC	SOT-227	N-Channel	1700 V	100 A	15 V	Chassis Mount	10187 pF	523 W			15 V	2.7 V	-55 °C	175 ░C	400 nC	26 mOhm
GeneSiC Semiconductor G3R20MT12N	SOT-227-4 miniBLOC	SOT-227	N-Channel	1200 V	105 A		Chassis Mount	5873 pF	365 W	24 mOhm	219 nC	15 V	2.69 V	-55 °C	175 ░C			20 V	-10 V

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General part information

N-Channel 1200 V 128A (Tc) 542W (Tc) Through Hole TO-247-4

Technical documentation and resources