MUR40010CT

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GeneSiC Semiconductor

DIODE MODULE GP 100V 200A 2TOWER

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GeneSiC Semiconductor

DIODE MODULE GP 100V 200A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MUR40010CT

Current - Average Rectified (Io) (per Diode)	200 A
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Reverse Recovery Time (trr)	90 ns
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Mounting Type	Technology	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Package / Case
GeneSiC Semiconductor MUR40010CT	200 mA 500 ns	100 V	90 ns	1.3 V	1 Pair Common Cathode	Chassis Mount	Standard	Twin Tower	200 A	Twin Tower

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	80	$ 110.13

General part information

Diode Array 1 Pair Common Cathode 100 V 200A Chassis Mount Twin Tower

Technical documentation and resources