UMB10NTN

Active

Rohm Semiconductor

TRANSISTOR: PNP X2; BIPOLAR; BRT; 50V; 0.1A; 150MW; SC88,SOT363

Search across all available documentation for this part.

Active

Rohm Semiconductor

TRANSISTOR: PNP X2; BIPOLAR; BRT; 50V; 0.1A; 150MW; SC88,SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	UMB10NTN

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	UMT6
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	Transistor Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case
Rohm Semiconductor UMB10NTN	Surface Mount	80	47000 Ohms	100 mA	UMT6	300 mV	2.2 kOhm	2 PNP - Pre-Biased (Dual)	250 MHz	50 V	500 nA	6-TSSOP SC-88 SOT-363

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6