TPH1500CNH1,LQ

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Toshiba Semiconductor and Storage

150V U-MOS VIII-H SOP-ADVANCE(N)

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Toshiba Semiconductor and Storage

150V U-MOS VIII-H SOP-ADVANCE(N)

Technical Specifications

Parameters and characteristics for this part

Specification	TPH1500CNH1,LQ

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 170 W
Rds On (Max) @ Id, Vgs	15.4 mOhm
Supplier Device Package	8-SOP Advance
Supplier Device Package [x]	5
Supplier Device Package [y]	5.75
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology
Toshiba Semiconductor and Storage TPH1500CNH1,LQ	150 V	2200 pF	8-PowerTDFN	5.75	5	8-SOP Advance	Surface Mount	10 V	20 V	15.4 mOhm	N-Channel	150 °C	2.5 W 170 W	38 A	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 38A (Tc) 2.5W (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5.75)

Technical documentation and resources