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ES2FA R3G - PE1DAH

ES2FA R3G

Unknown
Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 2A DO214AC

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ES2FA R3G - PE1DAH

ES2FA R3G

Unknown
Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 2A DO214AC

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationES2FA R3G
Capacitance @ Vr, F20 pF
Current - Average Rectified (Io)2 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDO-214AC, SMA
Reverse Recovery Time (trr)35 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-214AC (SMA)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]300 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

ES2F Series

Diode 300 V 2A Surface Mount DO-214AC (SMA)

Documents

Technical documentation and resources