AOK66613

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 58.5A/120A TO247

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 58.5A/120A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	AOK66613

Current - Continuous Drain (Id) @ 25°C	58.5 A
Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	5300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	15.6 W, 312 W
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Alpha & Omega Semiconductor Inc. AOK66613	110 nC	20 V	-55 °C	175 ░C	60 V	N-Channel	TO-247	3.5 V	MOSFET (Metal Oxide)	5300 pF	TO-247-3	8 V 10 V	Through Hole	58.5 A	120 A	15.6 W 312 W

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General part information

N-Channel 60 V 58.5A (Ta), 120A (Tc) 15.6W (Ta), 312W (Tc) Through Hole TO-247

Technical documentation and resources