AS3D020065A

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ANBON SEMICONDUCTOR (INT'L) LIMITED

650V,20A SILICON CARBIDE SCHOTTK

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ANBON SEMICONDUCTOR (INT'L) LIMITED

650V,20A SILICON CARBIDE SCHOTTK

Technical Specifications

Parameters and characteristics for this part

Specification	AS3D020065A

Capacitance @ Vr, F	1190 pF
Current - Average Rectified (Io)	56 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.65 V

Part	Technology	Supplier Device Package	Capacitance @ Vr, F	Mounting Type	Package / Case	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)
ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D020065A	SiC (Silicon Carbide) Schottky	TO-220-2	1190 pF	Through Hole	TO-220-2	No Recovery Time	650 V	0 ns	20 µA	1.65 V	175 ░C	-55 C	56 A

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General part information

Diode 650 V 56A Through Hole TO-220-2

Technical documentation and resources