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RS6L120BGTB1 - ROHM RS6P100BHTB1

RS6L120BGTB1

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Rohm Semiconductor

MOSFET, N-CH, 60V, 150A, HSOP ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Datasheet +28

RS6L120BGTB1 - ROHM RS6P100BHTB1

RS6L120BGTB1

Active

Rohm Semiconductor

MOSFET, N-CH, 60V, 150A, HSOP ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet +28

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RS6L120BGTB1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	2.7 mOhm
Supplier Device Package	8-HSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.58
		10	$ 3.03
		100	$ 2.15
		500	$ 1.77
		1000	$ 1.65
	Digi-Reel®	1	$ 4.58
		10	$ 3.03
		100	$ 2.15
		500	$ 1.77
		1000	$ 1.65
	Tape & Reel (TR)	2500	$ 1.61
Newark	Each (Supplied on Cut Tape)	1	$ 5.33
		10	$ 3.77
		25	$ 3.48
		50	$ 3.18
		100	$ 2.88
		250	$ 2.87
		500	$ 2.50
		1000	$ 2.39

Description

General part information

RS6L120BG Series

RS6L120BG is a power MOSFET with low on - resistance, suitable for switching.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

RS6L120BG Data Sheet

Measurement Method and Usage of Thermal Resistance RthJC

Types and Features of Transistors

Application Note

HSOP8(TB1) Taping Information

Package Information

PCB Layout Thermal Design Guide

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

HSOP8 Cu CRIP Inner Structure

Package Information

Two-Resistor Model for Thermal Simulation

Taping Information

Package Information

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

List of Transistor Package Thermal Resistance

Method for Monitoring Switching Waveform

Schematic Design & Verification

Report of SVHC under REACH Regulation

Environmental Data

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Moisture Sensitivity Level - Transistors

Package Information

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

What is a Thermal Model? (Transistor)

What Is Thermal Design

About Flammability of Materials

Environmental Data

HSOP8(TB1) Dimension

Package Information

RS6L120BG ESD Data

Characteristics Data

About Export Regulations

Export Information

Notes for Temperature Measurement Using Thermocouples

Part Explanation

Application Note

HSOP8(TB1) Explanation for Marking

Package Information

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

RS6L120BG Series

Nch 60V 150A, HSOP8, Power MOSFET

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	FET Type	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Operating Temperature	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Rohm Semiconductor RS6L120BGTB1	60 V	20 V	MOSFET (Metal Oxide)	N-Channel	2.5 V	8-HSOP	150 °C	2.7 mOhm	51 nC	4.5 V 10 V	8-PowerTDFN	Surface Mount	120 A	104 W