HERA806G C0G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A TO220AC

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	HERA806G C0G

Capacitance @ Vr, F	55 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	80 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Mounting Type	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If	Technology	Reverse Recovery Time (trr)
Taiwan Semiconductor Corporation HERA806G C0G	Through Hole	10 µA	55 pF	8 A	150 °C	-55 °C	TO-220AC	600 V	TO-220-2	200 mA 500 ns	1.7 V	Standard	80 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 8A Through Hole TO-220AC

Technical documentation and resources